Investigation of Random Dopant Fluctuation for Multi-Gate MOSFETs Using Analytical Solution of 3-D Poisson's Equation

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• Su Pin

  Department Of Electronics Engineering National Chiao Tung University

• WU Yu-Sheng

  Department of Electronics Engineering, National Chiao Tung University

• Wu Yu-sheng

  Department Of Electronics Engineering National Chiao Tung University

関連論文

• Modeling Geometry-Dependent Floating-Body Effect Using Body-Source Built-In Potential Lowering for SOI Circuit Simulation
• Investigation of Inversion C-V Reconstruction for Long-Channel MOSFETs with Leaky Dielectrics using Intrinsic Input Resistance Approach
• Modeling Geometry-Dependent Floating-Body Effect using Body-Source Built-In Potential Lowering for Scaled SOI CMOS
• Investigation of Matching Performance for Uniaxial Strained PMOSFETs
• Dependence of Electron Mobility on Doped Impurities
• Investigation of Random Dopant Fluctuation for Multi-Gate MOSFETs Using Analytical Solution of 3-D Poisson's Equation
• Investigation of Analog Performance for Uniaxial Strained PMOSFETs
• Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors
• Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect
• Investigation of Random Dopant Fluctuation for Multi-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Using Analytical Solutions of Three-Dimensional Poisson's Equation
• Investigation of Inversion Capacitance–Voltage Reconstruction for Metal Oxide Semiconductor Field Effect Transistors with Leaky Dielectrics using BSIM4/SPICE and Intrinsic Input Resistance Model
• Modeling Geometry-Dependent Floating-Body Effect Using Body-Source Built-In Potential Lowering for SOI Circuit Simulation

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