Investigation of Random Dopant Fluctuation for Multi-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Using Analytical Solutions of Three-Dimensional Poisson's Equation
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概要
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This paper investigates the random dopant fluctuation of multi-gate metal–oxide–semiconductor field-effect transistors (MOSFETs) using analytical solutions of three-dimensional (3D) Poisson's equation verified with device simulation. Especially, we analyze the impact of aspect ratio on the random dopant fluctuation in multi-gate devices. Our study indicates that with a given total width, lightly doped fin-type FET (FinFET) shows the smallest threshold voltage ($V_{\text{th}}$) dispersion because of its smaller $V_{\text{th}}$ sensitivity to the channel doping. For heavily doped devices, quasi-planar shows smaller $V_{\text{th}}$ dispersion because of its larger volume. The $V_{\text{th}}$ dispersion caused by random dopant fluctuation may still be significant in the lightly doped channel, especially for tri-gate and quasi-planar devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Su Pin
Department Of Electronics Engineering National Chiao Tung University
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Wu Yu-sheng
Department Of Electronics Engineering National Chiao Tung University
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Wu Yu-Sheng
Department of Electronics Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 30013, Taiwan
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Su Pin
Department of Electronics Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 30013, Taiwan
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