HUNG Cheng-Chou | United Microelectronics Corporation (UMC)
スポンサーリンク
概要
関連著者
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CHEN Kun-Ming
National Nano Device Laboratories
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HUNG Cheng-Chou
United Microelectronics Corporation (UMC)
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Huang Sheng-yi
United Microelectronic Corporation (umc)
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Huang Guo-wei
National Nano Device Laboratories
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Liao Wen-shiang
United Microelectronic Corporation (umc)
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CHANG Chun-Yen
Department of Electronics Engineering, National Chiao Tung University
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Su Pin
Department Of Electronics Engineering National Chiao Tung University
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Chang Chun-yen
Department Of Electronics Engineering National Chiao Tung University
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HUANG Sheng-Yi
United Microelectronics Corporation (UMC)
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LIAO Wen-Shiang
United Microelectronics Corporation (UMC)
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LIN Chun-Yi
United Microelectronics Corporation (UMC)
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FAN Cheng-Wen
United Microelectronics Corporation (UMC)
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TZENG Chih-Yuh
United Microelectronics Corporation (UMC)
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LIANG Victor
United Microelectronics Corporation (UMC)
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Chung Lee
United Microelectronic Corporation (umc)
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Chang Chun-yen
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity
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Chen Kun-ming
National Nano Device Laboratories (ndl)
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Liang Victor
United Microelectronics Corporation
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Wang Sheng-Chun
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Lien Chen-Hsin
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
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Liao Wen-Shiang
United Microelectronics Corporation (UMC), No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan
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Hung Cheng-Chou
United Microelectronics Corporation, Hsinchu 300, Taiwan
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Hung Cheng-Chou
United Microelectronics Corporation (UMC), No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan
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Huang Sheng-Yi
United Microelectronics Corporation, Hsinchu 300, Taiwan
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Huang Sheng-Yi
United Microelectronics Corporation (UMC), No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan
著作論文
- The Impact of Mixed-mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe HBTs
- Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors
- Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors