Chung Lee | United Microelectronic Corporation (umc)
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概要
関連著者
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CHEN Kun-Ming
National Nano Device Laboratories
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Chung Lee
United Microelectronic Corporation (umc)
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Huang Sheng-yi
United Microelectronic Corporation (umc)
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Liao Wen-shiang
United Microelectronic Corporation (umc)
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Tsen Huan-chiu
United Microelectronic Corporation (umc)
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HUANG Sheng-Yi
United Microelectronics Corporation (UMC)
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LIAO Wen-Shiang
United Microelectronics Corporation (UMC)
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Chen Kun-ming
National Nano Device Laboratories (ndl)
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CHANG Chun-Yen
Department of Electronics Engineering, National Chiao Tung University
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Chang Chun-yen
Department Of Electronics Engineering National Chiao Tung University
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HUNG Cheng-Chou
United Microelectronics Corporation (UMC)
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LIN Chun-Yi
United Microelectronics Corporation (UMC)
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FAN Cheng-Wen
United Microelectronics Corporation (UMC)
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TZENG Chih-Yuh
United Microelectronics Corporation (UMC)
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LIANG Victor
United Microelectronics Corporation (UMC)
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Chang Chun-yen
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity
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Liang Victor
United Microelectronics Corporation
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SHIH Tommy
United Microelectronic Corporation (UMC)
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Chung Lee
United Microelectronics Corp. (UMC), No. 3, Li-Hsin Rd. II, Hsinchu Science Park, Taiwan 30078, R.O.C.
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Chen Kun-Ming
National Nano Device Laboratories (NDL), No. 26, Prosperity Rd. I, Hsinchu Science Park, Taiwan 30078, R.O.C.
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Tang Mao-Chyuan
United Microelectronics Corp. (UMC), No. 3, Li-Hsin Rd. II, Hsinchu Science Park, Taiwan 30078, R.O.C.
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Liaw Yue-Gie
Silicon Integrated Systems Corp. (SiS), No. 16, Creation Rd. I, Hsinchu Science Park, Taiwan 30077, R.O.C.
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Liu Chee
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan 10617, R.O.C.
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Huang Sheng-Yi
United Microelectronics Corp. (UMC), No. 3, Li-Hsin Rd. II, Hsinchu Science Park, Taiwan 30078, R.O.C.
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Tsen Huan-Chiu
United Microelectronics Corp. (UMC), No. 3, Li-Hsin Rd. II, Hsinchu Science Park, Taiwan 30078, R.O.C.
著作論文
- The Impact of Mixed-mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe HBTs
- 3D Multi-gate NMOS Mobility Enhancement with High-tensile ILD-SiN_x Stressor
- Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining