Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off
スポンサーリンク
概要
- 論文の詳細を見る
Room-temperature optically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs) were demonstrated by laser lift-off. A VCSEL was fabricated by combining a GaN-based cavity with two dielectric distributed Bragg reflectors: SiO2/TiO2 and SiO2/Ta2O5. The Q factor of the VCSEL is 518 indicating a good interfacial layer quality of the structure. The laser emits blue-violet wavelength light at 414 nm under optical pumping at room temperature with a threshold pumping energy of 270 nJ. The laser emission has a narrow linewidth of 0.25 nm and a degree of polarization of 70%. The laser emission patterns clearly indicate a vertical lasing action of the VCSEL.
- 2006-04-15
著者
-
Kuo Hao-chung
Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University
-
Lu Tien-chang
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
-
Yao Hsin-hung
Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit
-
KAO Chih-Chiang
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University
-
LIANG Wen-Deng
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University
-
Chu Jung-tang
Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit
-
Wang Shing-chung
Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University
-
Tsai Jui-Yen
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan
-
Liang Wen-Deng
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan
-
Kao Chih-Chiang
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan
関連論文
- Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
- Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H_2O
- Ultraviolet Lasing of Sol-Gel Derived Zinc Oxide Polycrystalline Films
- Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
- High Performances of 650nm Resonant Cavity Light Emitting Diodes for Plastic Optical Fiber Applications
- Strong Ultraviolet Emission from InGaN/AlGaN Multi Quantum Well Grown by Multi-step Process
- Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off
- Enhanced Light Output of InGaN/GaN Light Emitting Diode with Excimer Laser Etching on Nano-roughened P-GaN Surface
- Numerical Study on Lateral Mode Behavior of 660-nm InGaP/AlGaInP Multiple-Quantum-Well Laser Diodes
- Lasing Actions of Octagonal Quasi-Periodic Photonic Crystal Microcavities
- Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off
- Optically pumped GaN-based vertical cavity surface emitting lasers: technology and characteristics (Special issue: Microoptics)
- Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector
- Light Enhancement of Silicon-Nanocrystal-Embedded SiOx Film on Silicon-on-Insulator Substrate
- Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Enhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillars
- Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers
- Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off
- Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar $a$-Plane GaN Revealed by X-ray Diffraction
- Efficiency Improvement of Single-Junction In0.5Ga0.5P Solar Cell with Compositional Grading p-Emitter/Window Capping Configuration
- Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))
- Metal Organic Chemical Vapor Deposition Growth of GaN-Based Light Emitting Diodes With Naturally Formed Nano Pyramids
- High-Temperature Polariton Lasing in a Strongly Coupled ZnO Microcavity
- Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation
- Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth
- Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
- Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
- High-Temperature Polariton Lasing in a Strongly Coupled ZnO Microcavity
- Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
- Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells ($\lambda = 1.28--1.45$ μm) with GaAsP Strain-Compensated Layers
- Ultraviolet Lasing of Sol–Gel-Derived Zinc Oxide Polycrystalline Films
- High-Performance 650 nm Resonant-Cavity Light-Emitting Diodes for Plastic Optical-Fiber Application
- 10 Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27 μm Emission Wavelengths
- Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces
- Performance Enhancement of $a$-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices
- Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
- Fabrication and Characteristics of GaN-Based Microcavity Light-Emitting Diodes with High Reflectivity AlN/GaN Distributed Bragg Reflectors
- Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers: Technology and Characteristics
- Enhanced Light Output in InGaN-Based Light-Emitting Diodes with Omnidirectional One-Dimensional Photonic Crystals
- Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces
- Strong Ultraviolet Emission from InGaN/AlGaN Multiple Quantum Well Grown by Multi-step Process
- GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes
- Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures
- Divergent Far-Field III–Nitride Ultrathin Film-Transferred Photonic Crystal Light-Emitting Diodes
- High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium--Tin-Oxide Nanorod by Glancing-Angle Deposition
- Lasing Actions of Octagonal Quasi-Periodic Photonic Crystal Microcavities
- Fabrication and Characterization of In0.25Ga0.75N/GaN Multiple Quantum Wells Embedded in Nanorods
- Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers
- Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H2O