Performance Enhancement of $a$-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices

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概要

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• We have fabricated $a$-plane light-emitting diodes (LEDs) with inserted InGaN/GaN superlattices. The structural characteristics and device performance of $a$-plane light-emitting diodes with/without superlattices were also identified. Transmission electron microscope (TEM) images revealed that the threading dislocation (TD) density for the sample using superlattices was reduced from $3 \times 10^{10}$ cm-2 down to ${\sim}9 \times 10^{9}$ cm-2. The electroluminescence (EL) intensity of the sample with InGaN/GaN superlattices was enhanced by a factor of 3.42 times to that of the conventional sample without InGaN/GaN superlattices. Furthermore, we observed that the polarization degree of $a$-plane LEDs with superlattices (56.3%) was much higher than that without superlattices (27.4%). A series of experiments demonstrated that the feasibility of using InGaN/GaN superlattices for the TD reduction and the improvement of luminescence performance in $a$-plane III–nitride devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Lu Tien-chang

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Wang Shing-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• KO Tsung-Shine

  Department of Atomic Science, National Tsing Hua University

• Chen Jun-rong

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Wang Shing-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, R.O.C.

• Wang Te-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, R.O.C.

• Ling Shih-Chun

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, R.O.C.

• Liu Po-Chun

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 195 Chung Hsing Rd., Sec. 4 Chu Tung, Hsinchu, Taiwan 310, R.O.C.

• Tsay Jenq-Dar

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 195 Chung Hsing Rd., Sec. 4 Chu Tung, Hsinchu, Taiwan 310, R.O.C.

• Kuo Hao-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, R.O.C.

• Lu Tien-Chang

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, R.O.C.

• Ko Tsung-Shine

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, R.O.C.

• Chen Jun-Rong

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, R.O.C.

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