Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H_2O

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-09-15

著者

• Kuo Hao-chung

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Kuo Hao‐chung

  National Chiao Tung Univ. Hsinchu Twn

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Wang S‐c

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• KAO Chih-Chiang

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• WANG Shing-Chung

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• Lai Fang-i

  Department Of Electronic Engineering Ching Yun University

• CHEN Wei-Yo

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University

• Kao Chih-chiang

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Lai Fang-i.

  Department Of Electronic Engineering Ching Yun University

• Wang Shing-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Chen Wei-yo

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Lai Fang-i

  Department Of Electrical Engineering Yuan Ze University

• Chen Wei-chun

  Instrument Technology Research Center National Applied Research Laboratories

関連論文

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• Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
• Fabrication and Micro-Photoluminescence Investigation of Mg-Doped Gallium Nitride Nanorods
• 10Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27μm Emission Wavelengths
• Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells (λ= 1.28-1.45μm) with GaAsP Strain-Compensated Layers
• Fabrication of High Speed Single Mode 1.27μm InGaAs:Sb-GaAsP Quantum Wells Vertical Cavity Surface Emitting Laser
• InGaN/GaN Multi-Quantum-Well Nanorods Fabricated by Plasma Etching Using Self-assembled Nickel Nano-masks
• Galliuln Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching : Semiconductors
• Beryllium-Implanted P-Type GaN With High Carrier Concentration : Semiconductors
• Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H_2O
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• Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
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• Efficiency Improvement of Single-Junction In0.5Ga0.5P Solar Cell with Compositional Grading p-Emitter/Window Capping Configuration
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• Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H2O

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