Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes
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概要
- 論文の詳細を見る
GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a double 12-fold photonic quasi-crystal (PQC) structure formed using nanoimprint lithography (NIL) and inductively coupled plasma reactive-ion etching (ICP-RIE) are fabricated and presented. At a driving current of 20 mA and with a chip size of $350 \times 350$ μm2, our thin-film LED with a double-12-fold-PQC structure gave a light output power of 40.5 mW, which is an increase of 77% when compared with the output power of a VLED without a PQC structure at a peak wavelength of 460 nm. In addition, the corresponding light radiation patterns show a narrow beam shape due to the strong guided light extraction on the n-GaN surface and the reflected light effect of the PQC structure formed in the vertical direction on the p-GaN surface.
- 2010-02-25
著者
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HUANG Hung-Wen
Institute of Electro-Optical Engineering, National Chiao Tung University
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Lin Chung-Hsiang
Luxtaltek Corporation, Chunan, Miaoli 350, Taiwan, R.O.C.
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Huang Zhi-Kai
Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan, R.O.C.
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Kang-Yuan Lee
Luxtaltek Corporation, Chunan, Miaoli 350, Taiwan, R.O.C.
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Chang-Chin Yu
Luxtaltek Corporation, Chunan, Miaoli 350, Taiwan, R.O.C.
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Hao-Chung Kuo
Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan, R.O.C.
関連論文
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- InGaN/GaN Multi-Quantum-Well Nanorods Fabricated by Plasma Etching Using Self-assembled Nickel Nano-masks
- Galliuln Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching : Semiconductors
- Enhanced Light Output of InGaN/GaN Light Emitting Diode with Excimer Laser Etching on Nano-roughened P-GaN Surface
- Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes