Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-07-15

著者

• Lin Chia-feng

  Institute Of Electro-optical Engineering National Chiao Tung University

• Lin Chia-feng

  Institute Of Electro-optics National Chiao Tung University

• Fang Chao-yi

  Department Of Materials Science And Engineering National Chiao Tung University

• Fang Chao-yi

  Department Of Materials Science And Engineering And Microelectronics And Information System Research

• CHANG Edward

  Department of Materials Science and Engineering, National Chiao Tung University

• FENG Ming-Shiann

  Department of Materials Science & Engineering, National Chiao-Tung University

• Chang Edward

  Department Of Materials Science And Engineering National Chiao Tung University

• HUANG Weng-Jung

  Department of Materials Science and Engineering, National Chiao Tung University

• Huang Weng-jung

  Department Of Materials Science And Engineering National Chiao Tung University

• Chang Edward

  Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc

• Feng Ming-shiann

  Department Of Materials Science And Engineering National Chiao Tung University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

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