AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers

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概要

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• Al0.12Ga0.88As/In0.18Ga0.82As high-electron-mobility transistor (HEMT) growth on a Si substrate using the Ge/GexSi1-x buffer is demonstrated. This is the first demonstration of Al0.12Ga0.88As/In0.18Ga0.82As HEMT growth on a Ge/GexSi1-x metamorphic buffer layer. The electron mobility in the In0.18Ga0.82As channel of the HEMT sample was 3,550 cm2/(V$\cdot$s). After fabrication, the HEMT device demonstrated a saturation current of 150 mA/mm with a transconductance of 155 mS/mm. The well behaved characteristics of the HEMT device on the Si substrate are believed to be due to the very thin buffer layer achieved and the lack of the antiphase boundary (APB) formation and Ge diffusion into the GaAs layers.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-09-25

著者

• Chang Chia-yuan

  Department Of Chemical Engineering National Taiwan University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Lin Yueh-chin

  Department Of Materials Science And Engineering National Chiao-tung University

• Hsieh Yen-Chang

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Huang Jui-Chien

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Chang Edward

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Chang Chia-Yuan

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.

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