A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications
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概要
- 論文の詳細を見る
A Cu-metallized InGaP/GaAs heterojunction bipolar transistor (HBT) using a Pd/Ge/Cu n-type ohmic contact, a Pt/Ti/Pt/Cu p-type ohmic contact, and a Ti/Pt/Cu interconnect has been fabricated for power applications. The $4\times 20$ μm2 HBT had an output power of 11.25 dBm with a power-added efficiency of 35.1%. After applying current-accelerated stress for 24 h, the current gain remained larger than 125. The device was also annealed at 200 °C for 24 h, and showed a slight decrease in output power from 10.06 to 9.83 dBm. The results demonstrated that reliable Cu metallization can be used for fabricating InGaP/GaAs HBTs for power applications.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-02-25
著者
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Lin Yueh-chin
Department Of Materials Science And Engineering National Chiao-tung University
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Huang Jui-Chien
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.
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Edward-Yi Chang
Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.
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Yu-Ling Tseng
Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.
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Jui-Chien Huang
Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.
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Tseng Yu-Ling
Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.
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Ke-Shian Chen
Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.
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Po-Chin Lu
Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.
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Mong-E Lin
Lextar Electronics Corporation, Hsinchu 30078, Taiwan, R.O.C.
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Yueh-Chin Lin
Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.
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- A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications