Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

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概要

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• A field-plated (FP) AlGaN/GaN high electron mobility transistor (HEMT) was fabricated. Investigations on the linearity characteristics were performed through two-tone and wide band code division multiple access (WCDMA) modulated excitations. The FP-HEMT exhibited an improved breakdown voltage of 160 V compared with that of the conventional HEMT. Additionally, a higher output power of 25.4 dBm with 43% power added efficiency at a 30 V drain bias at 2 GHz was achieved. When biased at 30 V and 15 mA/mm current density, the third-order intermodulation (IM3) level was measured to be $-27.1$ dBc (at $P_{1\text{dB}}$) and the adjacent channel power rejection (ACPR) was $-33.8$ dBc (at $P_{1\text{dB}}$) under WCDMA modulation at 2 GHz. Measurement results revealed that the field-plated structure improved the linearity performance over the conventional structure at high output power levels even beyond $P_{1\text{dB}}$.

• 2010-01-25

著者

• Chang Edward-yi

  Department Of Materials Science And Engineering And Microelectronics And Information System Research

• Hsu Heng-tung

  Department Of Communications Engineering Yuan Ze University

• Huang Jui-Chien

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Lu Chung-Yu

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Kuo Fang-Yao

  Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli, Taiwan 32003, R.O.C.

• Chen Yi-Chung

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Chang Chia-Ta

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Hsu Ting-Hung

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Hsu Heng-Tung

  Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli, Taiwan 32003, R.O.C.

• Hsu Heng-Tung

  Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan

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