Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation

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概要

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• A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). A high sheet resistivity and thermally stable isolation were demonstrated. The microstructures of implanted and postannealed specimens were investigated by transmission electron microscopy (TEM). The dependences of the sheet resistivity and different postannealing temperatures were correlated with the defect clusters and microstructure of lattice stacking faults. After 300 °C annealing, the sheet resistivity was higher than $10^{12}$ $\Omega$/square, which was attributed to the severe defect interaction eliminating the trapping centers and reducing the leakage current. A maximum output power density of 5.3 W/mm at $V_{\text{gs}}=-4$ V and $V_{\text{ds}}=50$ V at 3 GHz was demonstrated on lag-free HEMTs without field plates on sapphire substrate.

• 2010-02-25

著者

• Lu Chung-Yu

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Chung-Yu Lu

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Rong-Tan Huang

  Institute of Materials Engineering, National Taiwan Ocean University, Keelung 202-24, Taiwan, R.O.C.

• Shiu Jin-Yu

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Su Ting-Yi

  Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.

• Herbert Zirath

  Microwave Electronics Laboratory, Microtechnology and Nanoscience Chalmers University of Technology, SE 412 96 Gothenburg, Sweden

• Niklas Rorsman

  Microwave Electronics Laboratory, Microtechnology and Nanoscience Chalmers University of Technology, SE 412 96 Gothenburg, Sweden

• Edward Yi

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Jin-Yu Shiu

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

関連論文

• Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
• Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation

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