InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
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概要
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An InAs/In0.7Ga0.3As composite channel high-electron-mobility transistor (HEMT) fabricated using the gate sinking technique was realized for ultralow-power-consumption low-noise application. The device has a very high transconductance of 1900 mS/mm at a drain voltage of 0.5 V. The saturated drain–source current of the device is 1066 mA/mm. A current gain cutoff frequency ($ f_{\text{T}}$) of 113 GHz and a maximum oscillation frequency ($ f_{\text{max}}$) of 110 GHz were achieved at only drain bias voltage $V_{\text{ds}} = 0.1$ V. The $0.08 \times 40$ μm2 device demonstrated a minimum noise figure of 0.82 dB and a 14 dB associated gain at 17 GHz with 1.14 mW DC power consumption.
- 2008-09-25
著者
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Kuo Chien-i
Department Of Materials Science And Engineering National Chiao-tung University
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Hsu Heng-tung
Department Of Communications Engineering Yuan Ze University
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Chang Edward
Department Of Communications Engineering Yuan Ze University
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Tsern Wen-Chung
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Hsu Heng-Tung
Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan
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Miyamoto Yasuyuki
Department of Physical Electrons, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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