Metamorphic In0.53Ga0.47As Metal–Oxide–Semiconductor Structure on a GaAs Substrate with ZrO2 High-$k$ Dielectrics

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概要

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• The electrical properties of metamorphic In0.53Ga0.47As metal–oxide–semiconductor capacitors with a 100-Å-thick ZrO2 layer as high-$k$ dielectrics were investigated. The In0.53Ga0.47As surface was pretreated by either sulfur passivation or HCl cleaning before the ZrO2 deposition. Owing to the lower interface-state density after sulfidation, the sulfur-passivated capacitor exhibited better accumulation capacitance and strong inversion at capacitance–voltage measurement than the HCl-cleaned capacitor after post deposition annealing at 350 °C. On the basis of material analyses, the capacitors that subjected to underwent sulfur treatment were found to acquire a thin sulfur layer on the interface, which protects their surface from air exposure and prevents performance degradation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-05-25

著者

• CHEN Chun-Chi

  National Nano Device Laboratories

• Chang Chia-yuan

  Department Of Chemical Engineering National Taiwan University

• Kuo Chien-i

  Department Of Materials Science And Engineering National Chiao-tung University

• Hsu Heng-tung

  Department Of Communications Engineering Yuan Ze University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Chang Chia-Yuan

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Hsu Heng-Tung

  Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan

• Chen Chun-Chi

  National Nano Device Laboratories, No. 26, Prosperity Road 1, Science-based Industrial Park, Hsinchu, Taiwan 30078, R.O.C.

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