Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In_<0.5>Ga_<0.5>As and In_<0.3>Ga_<0.7>As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2012-05-25

著者

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Wong Yuen-yee

  Department Of Materials Science And Engineering National Chiao-tung University

• Wong Yuen-yee

  Department Of Materials Science And Engineering National Chiao Tung University

• Trinh Hai-dang

  Department Of Materials Science And Engineering National Chiao-tung University

• Trinh Hai-dang

  Department Of Materials Science And Engineering National Chiao Tung University

• Tran Binh-tinh

  Department Of Materials Science And Engineering National Chiao Tung University

• Nguyen Hong-quan

  Department Of Materials Science And Engineering National Chiao Tung University

• Chang Chia-hua

  Department Of Materials Science And Engineering National Chiao-tung University

• Dee Chang-fu

  Department Of Materials Science And Engineering National Chiao Tung University

• YU Hung-Wei

  Department of Materials Science and Engineering, National Chiao Tung University

• HSU Ching-Hsiang

  Department of Materials Science and Engineering, National Chiao Tung University

• CHUNG Chen-Chen

  Department of Materials Science and Engineering, National Chiao Tung University

• Yu Hung-wei

  Department Of Materials Science And Engineering National Chiao Tung University

• Hsu Ching-hsiang

  Department Of Materials Science And Engineering National Chiao Tung University

• Yu Hung-Wei

  Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.

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