Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates

スポンサーリンク

概要

• 論文の詳細を見る

• 2.2-μm-thick crack-free GaN films were grown on patterned Si substrates. The crack-free GaN films were obtained by patterning Si substrate and optimizing the graded AlxGa1-xN layers. With the increase of the graded AlxGa1-xN layer thickness, the GaN crystal quality improved as judged from the X-ray diffraction data. By applying multi-AlxGa1-xN layers on the patterned Si substrate, a 31% reduction of tensile stress for the GaN film was obtained as measured by micro-Raman. For the AlGaN/GaN high electron mobility transistor grown on 1\times 1 cm2 larger patterns, the device exhibits maximum drain current density of 776 mA/mm and maximum transconductance of 101 mS/mm.

• 2012-02-25

著者

• Kuo Chien-i

  Department Of Materials Science And Engineering National Chiao-tung University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Lin Kung-liang

  Department Of Materials Science And Engineering National Chiao Tung University

• Chang Chia-hua

  Department Of Materials Science And Engineering National Chiao-tung University

• Chang Edward

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Hsiao Yu-Lin

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Lu Lung-Chi

  Degree Program of Semiconductor Material and Process Equipment, College of Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Wu Chia-Hsun

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Maa Jer-Shen

  Institute of Lighting and Energy Photonics, College of Photonics, National Chiao-Tung University, Tainan 71150, Taiwan

• Luong Tien-Tung

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Huang Wei-Ching

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Dee Chang

  Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600, Bangi, Selangor, Malaysia

• Majlis Burhanuddin

  Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600, Bangi, Selangor, Malaysia

• Lin Kung-Liang

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Hsiao Yu-Lin

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Kuo Chien-I

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

関連論文

• A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier
• A 1.2-V Operation Power Pseudomorphic High Electron Mobility Transistor for Personal Handy Phone Handset Application
• Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
• Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
• Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations
• A Comparison of the Microstructural Feature and Bonding Strength of Plasma-Sprayed Hydroxyapatite Coatings with Hydrothermal and Vacuum Post-Heat Treatment
• Interfacial Characterization of Porcelain Veneered on the Pure Titanium under Vacuum Firing
• Adherence of Porcelain Veneered on Titanium with an Intermediate Plasma-Sprayed Zirconia Layer
• New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
• Controlled Placement of Self-Organized Ge Dots on Patterned Si(001) Surfaces
• Flower-Like Distribued Self-Oranized Ge Dots on Patterned Si (001) Substrates
• A Mechanism of Porosity Distribution in A356 Aluminum Alloy Castings
• Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
• Highly Selective GaAs/Al_Ga_As Wet Etch Process for the Gate Recess of Low-Voltage-Power Pseudomorphic High-Electron-Mobility Transistor
• Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
• Novel I-Line Phase Shift Mask Technique for Submicron T-Shaped Gate Formation
• WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors
• Independent Tuning of the Confinement and Density in a Quantum Point Contact using a Center Gate and a Back Gate
• High-Quality 1 eV In0.3Ga0.7As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell Application
• V-Band Flip-Chip Assembled Gain Block Using In_Ga_As Metamorphic High-Electron-Mobility Transistor Technology
• Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO_2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors
• InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
• Growth of High-Quality In_Ga_N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
• Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In_Ga_As and In_Ga_As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
• Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz
• Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
• InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10° off Misoriented GaAs Substrate
• Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate
• Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
• AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers
• InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Cu/Pt/Ti Gate and Cu Airbridges
• New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors
• DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
• Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
• High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications
• Growth of High-Quality Ge Epitaxial Layers on Si (100)
• Metamorphic In0.53Ga0.47As Metal–Oxide–Semiconductor Structure on a GaAs Substrate with ZrO2 High-$k$ Dielectrics
• Mechanism of Microstructure Evolution for the Cu/Ta/GaAs Structure after Thermal Annealing
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
• Gold-Free Fully Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor
• Band Alignment Parameters of Al
• Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology
• Band Alignment Parameters of Al₂O₃/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
• Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
• Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates

もっと見る 閉じる

スポンサーリンク