DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology

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概要

• 論文の詳細を見る

• A 70 nm InAs channel quantum well field effect transistor (QWFET) fabricated by a narrowing source–drain (S/D) spacing technique was realized for future high-speed and logic applications. The S/D spacing was decreased from 3 to 0.65 μm through a simple fabrication process, which is an ameliorative redeposition ohmic technique. The drain-source current density and transconductance of the device were increased from 391 to 517 mA/mm and from 946 to 1348 mS/mm after the scaling of the S/D spacing, respectively. In addition, the current gain cutoff frequency ($ f_{\text{T}}$) was also increased from 185 to 205 GHz. These results show that the easy method can effectively improve the III–V QWFET device performance for high-frequency and high-speed applications.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-01-25

著者

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering

• Kuo Chien-i

  Department Of Materials Science And Engineering National Chiao-tung University

• Hsu Heng-tung

  Department Of Communications Engineering Yuan Ze University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Chang Edward

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Wu Chien-Ying

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Chen Yu-Lin

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Hsiao Yu-Lin

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Hsiao Yu-Lin

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Hsu Heng-Tung

  Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan

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