InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
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概要
- 論文の詳細を見る
- 2011-05-25
著者
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Kato Atsushi
Department Of General Surgery Chiba University Graduate School Of Medicine
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kanazawa Toru
Department Of Physical Electronics Tokyo Institute Of Technology
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Ikeda Shunsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Terao Ryousuke
Department Of Physical Electronics Tokyo Institute Of Technology
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YONAI Yoshiharu
Department of Physical Electronics, Tokyo Institute of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Yonai Yoshiharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Kato Atsushi
Department Of Biomass Chemistry Forestry And Forest Products Research Institute
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Kato Atsushi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kato Atsushi
Department Of Biological Science Graduate School Of Life And Environment Science Shimane University
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Miyamoto Yasuyuki
Tokyo Inst. Technol. Tokyo Jpn
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IKEDA Shunsuke
Department of Energy Sciences, Tokyo Institute of Technology
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