Kanazawa Toru | Department Of Physical Electronics Tokyo Institute Of Technology
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概要
関連著者
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Kanazawa Toru
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Tokyo Inst. Technol. Tokyo Jpn
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Tokyo Institute of Technology
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齋藤 尚史
東京工業大学
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Saito Hisahi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kanazawa Toru
Department of Physical Electronics, Tokyo Institute of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Yonai Yoshiharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Tokyo Institute Of Technology
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Kato Atsushi
Department Of Physical Electronics Tokyo Institute Of Technology
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Saito Hisashi
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Kato Atsushi
Department Of General Surgery Chiba University Graduate School Of Medicine
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IKEDA Shunsuke
Tokyo Institute of Technology, Department of Physical Electronics
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Ikeda Shunsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Terao Ryousuke
Department Of Physical Electronics Tokyo Institute Of Technology
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YONAI Yoshiharu
Department of Physical Electronics, Tokyo Institute of Technology
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Kato Atsushi
Department Of Biomass Chemistry Forestry And Forest Products Research Institute
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Kato Atsushi
Department Of Biological Science Graduate School Of Life And Environment Science Shimane University
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Yonai Yoshiharu
Tokyo Institute Of Technology
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Kanazawa Toru
Tokyo Institute Of Technology
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KATO Atsushi
Tokyo Institute of Technology
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Ikeda Shunsuke
Tokyo Institute Of Technology
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IKEDA Shunsuke
Department of Energy Sciences, Tokyo Institute of Technology
著作論文
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
- InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
- Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode