Kanazawa Toru | Tokyo Institute Of Technology

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概要

• KANAZAWA Toruの詳細を見る
• 同名の論文著者
• Tokyo Institute Of Technologyの論文著者

関連著者

• Miyamoto Yasuyuki

  Tokyo Inst. Technol. Tokyo Jpn

• Kanazawa Toru

  Tokyo Institute Of Technology

• Ikeda Shunsuke

  Tokyo Institute Of Technology

• TERAO Ryousuke

  Tokyo Institute of Technology, Department of Physical Electronics

• IKEDA Shunsuke

  Tokyo Institute of Technology, Department of Physical Electronics

• Yonai Yoshiharu

  Tokyo Institute Of Technology

• KATO Atsushi

  Tokyo Institute of Technology

• Saito Hisahi

  Department Of Physical Electronics Tokyo Institute Of Technology

• KANAZAWA Toru

  Tokyo Institute of Technology, Department of Physical Electronics

• WAKABAYASHI Kazuya

  Tokyo Institute of Technology, Department of Physical Electronics

• SAITO Hisashi

  Tokyo Institute of Technology, Department of Physical Electronics

• MIYAMOTO Yasuyuki

  Tokyo Institute of Technology, Department of Physical Electronics

• FURUYA Kazuhito

  Tokyo Institute of Technology, Department of Physical Electronics

• Furuya Kazuhito

  Tokyo Institute Of Technology Dept. Of Physical Electronics

• Kanazawa Toru

  Department Of Physical Electronics Tokyo Institute Of Technology

• Ikeda Shunsuke

  Department Of Physical Electronics Tokyo Institute Of Technology

• Terao Ryousuke

  Department Of Physical Electronics Tokyo Institute Of Technology

• Wakabayashi Kazuya

  Tokyo Institute Of Technology Department Of Physical Electronics

• Yonai Yoshiharu

  Department Of Physical Electronics Tokyo Institute Of Technology

• Furuya Kazuhito

  Tokyo Institute Of Technology

• Kato Atsushi

  Department Of Physical Electronics Tokyo Institute Of Technology

• Saito Hisashi

  Tokyo Inst. Technol. Tokyo Jpn

• Miyamoto Yasuyuki

  Tokyo Institute of Technology

• Yonai Yoshiharu

  Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan

• Kanazawa Toru

  Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan

• Ikeda Shunsuke

  Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan

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著作論文

• Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source
• Erratum: “InP/InGaAs Composite Metal--Oxide--Semiconductor Field-Effect Transistors with Regrown Source and Al2O3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm”
• Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode

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