Furuya Kazuhito | Tokyo Institute Of Technology
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概要
関連著者
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Furuya Kazuhito
Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Tokyo Inst. Technol. Tokyo Jpn
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Miyamoto Yasuyuki
Tokyo Institute of Technology
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Kobayashi T
Ntt Corp. Kanagawa Jpn
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Suzuki Hiroyuki
Department Of Physical Electronics Tokyo Institute Of Technology
著作論文
- Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
- Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
- Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Double-Slit Interference Observation of Hot Electrons in Semiconductors : Analysis of Experimental Data
- Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source
- Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector