Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)

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概要

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• In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transistors (DHBTs) with buried SiO_2 wires. The SiO_2 wires were buried in the collector and subcollector layers by metalorganic chemical vapor deposition toward reduction of the base-collector capacitance under the base electrode. A current gain of 22 was obtained at a collector current density of 1.25 MA/cm^2 for a DHBT with an emitter width of 400 nm. The DC characteristics of DHBTs with buried SiO_2 wires were the same as those of DHBTs without buried SiO_2 wires on the same substrate. A current gain cutoff frequency (f_T) of 213 GHz and a maximum oscillation frequency (f_<max>) of 100 GHz were obtained at an emitter current density of 725 kA/cm^2.

• 2010-06-23

著者

• SUZUKI Hiroyuki

  Graduate School of Life Sciences, Tohoku University

• TAKEBE Naoaki

  Graduate School of Science and Engineering, Tokyo Institute of Technology

• KOBAYASHI Takashi

  Graduate School of Science and Engineering, Tokyo Institute of Technology

• MIYAMOTO Yasuyuki

  Graduate School of Science and Engineering, Tokyo Institute of Technology

• FURUYA Kazuhito

  Graduate School of Science and Engineering, Tokyo Institute of Technology

• Kobayashi T

  Ntt Corp. Kanagawa Jpn

• Takebe Naoaki

  Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Suzuki Hiroyuki

  Department Of Physical Electronics Tokyo Institute Of Technology

• Suzuki Hiroyuki

  Graduate School Of Life Sciences Tohoku University

• Kobayashi Takashi

  Department Of Physical Electronics Tokyo Institute Of Technology

• Furuya Kazuhito

  Tokyo Institute Of Technology

• Miyamoto Yasuyuki

  Tokyo Inst. Technol. Tokyo Jpn

• Kobayashi Takashi

  Graduate School Of Information Science Nagoya University

• Suzuki Hiroyuki

  Graduate School Of Engineering Hiroshima University

• Furuya Kazuhito

  Graduate School of Science and Engineering Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

• Miyamoto Yasuyuki

  Tokyo Institute of Technology

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