Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism

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概要

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• We theoretically examine the charging time of a double-layer emitter in heterojunction bipolar transistors (HBTs) on the basis of transmission formalism. It is indicated that the charging time is shorter in the double-layer emitter with an n++/n+ combination than in the single-layer n+ emitter. The nonparabolic band structure is responsible for this finding. Thus, the inclusion of a second layer in the emitter is essential for high-speed operation. The theory also explains the experimentally reported charging times in state-of-the-art high-speed HBTs.

• Japan Society of Applied Physicsの論文
• 2006-09-25

著者

• MIYAMOTO Yasuyuki

  Graduate School of Science and Engineering, Tokyo Institute of Technology

• MACHIDA Nobuya

  Graduate School of Science and Engineering, Tokyo Institute of Technology

• Furuya Kazuhito

  Graduate School of Science and Engineering Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

• Furuya Kazuhito

  Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

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