Miyamoto Yasuyuki | Tokyo Inst. Technol. Tokyo Jpn
スポンサーリンク
概要
関連著者
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Miyamoto Yasuyuki
Tokyo Inst. Technol. Tokyo Jpn
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Furuya Kazuhito
Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Tokyo Institute of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Kobayashi T
Ntt Corp. Kanagawa Jpn
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Suzuki Hiroyuki
Department Of Physical Electronics Tokyo Institute Of Technology
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Kobayashi Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Saito Hisahi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kanazawa Toru
Department Of Physical Electronics Tokyo Institute Of Technology
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SUZUKI Hiroyuki
Department of Oral and Maxillofacial Surgery, Hamamatsu University School of Medicine
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KOBAYASHI Takashi
Department of Information Engineering, Graduate School of Information Science, Nagoya University
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Kobayashi Takashi
Department Of Cardiology Kobe City Medical Center General Hospital
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MIYAMOTO Yasuyuki
Graduate School of Science and Engineering, Tokyo Institute of Technology
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FURUYA Kazuhito
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Takebe Naoaki
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Suzuki Hiroyuki
Department Of Applied Physics School Of Science And Engineering Waseda University:(present Address)h
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Talahashi Shinnosuke
Department of Physical Electronics, Tokyo Institute of Technology
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Talahashi Shinnosuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Kanazawa Toru
Tokyo Institute Of Technology
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Ikeda Shunsuke
Tokyo Institute Of Technology
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Kobayashi Takashi
Department Of Biology Faculty Of Science Kanazawa University
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Suzuki Hiroyuki
Department Of Animal Science Faculty Of Agriculture Hokkaido University
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KOBAYASHI Takashi
Department of Applied Physics,Faculty of Engineering,Nagoya University
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Furuya Kazuhito
Graduate School of Science and Engineering Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
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齋藤 尚史
東京工業大学
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SUZUKI Hiroyuki
Graduate School of Life Sciences, Tohoku University
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TAKEBE Naoaki
Graduate School of Science and Engineering, Tokyo Institute of Technology
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KOBAYASHI Takashi
Graduate School of Science and Engineering, Tokyo Institute of Technology
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町田 信也
東京工業大学大学院理工学研究科:科学技術振興機構crest
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Suzuki Hiroyuki
Graduate School Of Life Sciences Tohoku University
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TERAO Ryousuke
Tokyo Institute of Technology, Department of Physical Electronics
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IKEDA Shunsuke
Tokyo Institute of Technology, Department of Physical Electronics
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MIYAMOTO Yasuyuki
Tokyo Institute of Technology, Department of Physical Electronics
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Kanazawa Toru
Department of Physical Electronics, Tokyo Institute of Technology
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Furuya Kazuhito
Tokyo Institute Of Technology Dept. Of Physical Electronics
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Machida Nobuya
Department Of Physical Electronics Tokyo Institute Of Technology:crest Japan Science And Technology
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Ikeda Shunsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Terao Ryousuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Yonai Yoshiharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Kato Atsushi
Department Of Physical Electronics Tokyo Institute Of Technology
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Yonai Yoshiharu
Tokyo Institute Of Technology
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KATO Atsushi
Tokyo Institute of Technology
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Kobayashi Takashi
Graduate School Of Information Science Nagoya University
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Suzuki Hiroyuki
Graduate School Of Engineering Hiroshima University
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Saito Hisashi
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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古屋 一仁
東京工業大学院理工学研究科
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宮本 恭幸
東京工業大学
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Saito Hisashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kato Atsushi
Department Of General Surgery Chiba University Graduate School Of Medicine
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ISHIDA Masashi
Department of Orthopaedics, Graduate School of Medical Science, Kyoto Prefectural University of Medi
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MACHIDA Nobuya
Department of Physical Electronics, Tokyo Institute of Technology
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Nakagawa Ryo
Department of Biotechnology, Graduate School of Engineering, Nagoya University
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KASHIMA Issei
Department of Physical Electronics, Tokyo Institute of Technology
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NINOMIYA Yasunori
Graduate School of Science and Engineering, Tokyo Institute of Technology
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MACHIDA Nobuya
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Kashima Issei
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakagawa Ryo
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakagawa Ryo
Department Of Biotechnology Graduate School Of Engineering Nagoya University
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Ishida Masashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Ishida Masashi
Department Of Chemistry Nagoya University
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Machida Nobuya
Department Of Chemistry Konan University
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KANAZAWA Toru
Tokyo Institute of Technology, Department of Physical Electronics
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WAKABAYASHI Kazuya
Tokyo Institute of Technology, Department of Physical Electronics
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SAITO Hisashi
Tokyo Institute of Technology, Department of Physical Electronics
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FURUYA Kazuhito
Tokyo Institute of Technology, Department of Physical Electronics
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TAKAHASHI Shinnosuke
Department of Physical Electronics, Tokyo Institute of Technology
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YONAI Yoshiharu
Department of Physical Electronics, Tokyo Institute of Technology
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Ninomiya Yasunori
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Wakabayashi Kazuya
Tokyo Institute Of Technology Department Of Physical Electronics
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Kobayashi Takashi
Tokyo Institute Of Technology
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TAKEBE Naoaki
Tokyo Institute of Technology
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SUZUKI Hiroyuki
Tokyo Institute of Technology
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Kato Atsushi
Department Of Biomass Chemistry Forestry And Forest Products Research Institute
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Kato Atsushi
Department Of Biological Science Graduate School Of Life And Environment Science Shimane University
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Saito Hisashi
Tokyo Inst. Technol. Tokyo Jpn
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Machida Nobuya
Graduate School of Science and Engineering Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
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Yonai Yoshiharu
Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan
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Kanazawa Toru
Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan
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IKEDA Shunsuke
Department of Energy Sciences, Tokyo Institute of Technology
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Ikeda Shunsuke
Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan
著作論文
- Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
- Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
- Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Double-Slit Interference Observation of Hot Electrons in Semiconductors : Analysis of Experimental Data
- Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source
- Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
- Erratum: “InP/InGaAs Composite Metal--Oxide--Semiconductor Field-Effect Transistors with Regrown Source and Al2O3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm”
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
- Fabrication of InP/InGaAs DHBTs with Buried SiO_2 Wires
- Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode