Erratum: “InP/InGaAs Composite Metal--Oxide--Semiconductor Field-Effect Transistors with Regrown Source and Al₂O₃ Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm”

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概要

• 論文の詳細を見る
• 2011-09-25

著者

• TERAO Ryousuke

  Tokyo Institute of Technology, Department of Physical Electronics

• Miyamoto Yasuyuki

  Tokyo Inst. Technol. Tokyo Jpn

• Yonai Yoshiharu

  Tokyo Institute Of Technology

• Kanazawa Toru

  Tokyo Institute Of Technology

• KATO Atsushi

  Tokyo Institute of Technology

• Ikeda Shunsuke

  Tokyo Institute Of Technology

• Yonai Yoshiharu

  Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan

• Kanazawa Toru

  Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan

• Ikeda Shunsuke

  Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan

関連論文

• Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
• Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
• Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
• Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Double-Slit Interference Observation of Hot Electrons in Semiconductors : Analysis of Experimental Data
• Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source
• Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
• Erratum: “InP/InGaAs Composite Metal--Oxide--Semiconductor Field-Effect Transistors with Regrown Source and Al2O3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm”
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
• Fabrication of InP/InGaAs DHBTs with Buried SiO_2 Wires
• Effect of Rotary Cutting Tool Posture on Machining Performance utilizing Multi-Tasking Lathe
• Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode
• Plasma Transport in Periodic Magnetic Field by Permanent Ring Magnets

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