Yonai Yoshiharu | Tokyo Institute Of Technology

スポンサーリンク

概要

• YONAI Yoshiharuの詳細を見る
• 同名の論文著者
• Tokyo Institute Of Technologyの論文著者

関連著者

• Miyamoto Yasuyuki

  Tokyo Inst. Technol. Tokyo Jpn

• Yonai Yoshiharu

  Tokyo Institute Of Technology

• Kanazawa Toru

  Tokyo Institute Of Technology

• KATO Atsushi

  Tokyo Institute of Technology

• Ikeda Shunsuke

  Tokyo Institute Of Technology

• TERAO Ryousuke

  Tokyo Institute of Technology, Department of Physical Electronics

• IKEDA Shunsuke

  Tokyo Institute of Technology, Department of Physical Electronics

• Kanazawa Toru

  Department Of Physical Electronics Tokyo Institute Of Technology

• Yonai Yoshiharu

  Department Of Physical Electronics Tokyo Institute Of Technology

• Kato Atsushi

  Department Of Physical Electronics Tokyo Institute Of Technology

• Miyamoto Yasuyuki

  Tokyo Institute of Technology

• Yonai Yoshiharu

  Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan

• Kanazawa Toru

  Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan

• Ikeda Shunsuke

  Tokyo Institute of Technology, Department of Physical Electronics, Meguro, Tokyo 152-8552, Japan

もっと見る 閉じる

著作論文

• Erratum: “InP/InGaAs Composite Metal--Oxide--Semiconductor Field-Effect Transistors with Regrown Source and Al2O3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm”
• Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode

スポンサーリンク