Fabrication of InP/InGaAs DHBTs with Buried SiO_2 Wires
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概要
- 論文の詳細を見る
- 2011-05-01
著者
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Kobayashi T
Ntt Corp. Kanagawa Jpn
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Takebe Naoaki
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Suzuki Hiroyuki
Department Of Physical Electronics Tokyo Institute Of Technology
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MIYAMOTO Yasuyuki
Tokyo Institute of Technology, Department of Physical Electronics
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Furuya Kazuhito
Tokyo Institute Of Technology Dept. Of Physical Electronics
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Kobayashi Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kobayashi Takashi
Tokyo Institute Of Technology
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TAKEBE Naoaki
Tokyo Institute of Technology
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SUZUKI Hiroyuki
Tokyo Institute of Technology
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Furuya Kazuhito
Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Tokyo Inst. Technol. Tokyo Jpn
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Miyamoto Yasuyuki
Tokyo Institute of Technology
関連論文
- Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
- Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
- Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Double-Slit Interference Observation of Hot Electrons in Semiconductors : Analysis of Experimental Data
- Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source
- Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
- High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
- Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
- Erratum: “InP/InGaAs Composite Metal--Oxide--Semiconductor Field-Effect Transistors with Regrown Source and Al2O3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm”
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Study of Inelastic Scattering Effect in Unstrained and Strain-Compensated GaInAs/GaInP Multiquantum Barriers
- InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
- Active Distributed Reflector Lasers Phase Adjusted by Groove Region
- Fabrication of InP/InGaAs DHBTs with Buried SiO_2 Wires
- Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode