Fabrication of InP/InGaAs DHBTs with Buried SiO_2 Wires

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概要

• 論文の詳細を見る
• 2011-05-01

著者

• Kobayashi T

  Ntt Corp. Kanagawa Jpn

• Takebe Naoaki

  Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Suzuki Hiroyuki

  Department Of Physical Electronics Tokyo Institute Of Technology

• MIYAMOTO Yasuyuki

  Tokyo Institute of Technology, Department of Physical Electronics

• Furuya Kazuhito

  Tokyo Institute Of Technology Dept. Of Physical Electronics

• Kobayashi Takashi

  Department Of Physical Electronics Tokyo Institute Of Technology

• Kobayashi Takashi

  Tokyo Institute Of Technology

• TAKEBE Naoaki

  Tokyo Institute of Technology

• SUZUKI Hiroyuki

  Tokyo Institute of Technology

• Furuya Kazuhito

  Tokyo Institute Of Technology

• Miyamoto Yasuyuki

  Tokyo Inst. Technol. Tokyo Jpn

• Miyamoto Yasuyuki

  Tokyo Institute of Technology

関連論文

• Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
• Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
• Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
• Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Double-Slit Interference Observation of Hot Electrons in Semiconductors : Analysis of Experimental Data
• Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source
• Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
• High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
• DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
• Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
• Erratum: “InP/InGaAs Composite Metal--Oxide--Semiconductor Field-Effect Transistors with Regrown Source and Al2O3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm”
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• Study of Inelastic Scattering Effect in Unstrained and Strain-Compensated GaInAs/GaInP Multiquantum Barriers
• InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
• Active Distributed Reflector Lasers Phase Adjusted by Groove Region
• Fabrication of InP/InGaAs DHBTs with Buried SiO_2 Wires
• Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode

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