InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface

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概要

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• We report our recent development of an InAlN barrier layer for GaN-based FETs. We fabricated a novel structure consisting of InAlN/AlGaN/GaN. With this structure, we achieved higher electron mobility and a flatter surface than those for the conventional InAlN/GaN heterostructures. We investigated the AlN interlayer thickness dependence of mobility and surface flatness. The thickness strongly affected the mobility and the surface roughness of InAlN/GaN. In contrast, the variation of these values is suppressed for the new structure. We achieved low sheet resistance even for the new structure without an AlN interlayer. These results point to the possibility of developing GaN-based FETs with high performance and high reliability.

• 社団法人電子情報通信学会の論文
• 2009-06-17

著者

• Shigekawa Naoteru

  NTT Photonics Laboratories

• Kobayashi T

  Ntt Corp. Kanagawa Jpn

• MAEDA Narihiko

  NTT Photonics Laboratories, NTT Corporation

• HIROKI Masanobu

  NTT Photonics Laboratories, NTT Corporation

• KOBAYASHI Takashi

  NTT Photonics Laboratories, NTT Corporation

• Maeda Narihiko

  Ntt Corp. Atsugi‐shi Jpn

• Maeda Narihiko

  Ntt Photonics Laboratories Ntt Corporation

• Maeda Narihiko

  Institute For Solid State Physics University Of Tokyo

• Hiroki Masanobu

  Ntt Photonics Laboratories Ntt Corporation

• Shigekawa Naoteru

  Ntt Photonic Lab. Kanagawa Jpn

• Kobayashi Takashi

  Department Of Physical Electronics Tokyo Institute Of Technology

関連論文

• P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
• Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
• Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
• Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
• Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
• Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
• Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
• Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
• Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
• Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
• Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
• Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
• Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
• Compressively strained In[x]Al1-xN/Al0.22Ga0.78N/GaN(x=0.245-0.325) heterostructure field effect transistors with Regrown AlGaN contact layers (Special issue: Solid state devices and materials)
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
• Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/Gan Insulated Gate Heterostructure Field-Effect Transistors
• High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
• DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
• Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
• Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
• Enhanced Dislocation Mobility by Electron-Beam Irradiation in GaP
• Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
• Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
• Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
• Studies of Constrained Dynamics of the Phase Transition in the Artificial Bilayer Membrane of Dialkyl Ammonium Amphiphile by Quasielastic Neutron Scattering
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
• Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN ($x = 0.245--0.325$) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
• Fabrication of InP/InGaAs DHBTs with Buried SiO_2 Wires
• RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
• Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy
• High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
• DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic Wave Devices
• Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
• Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
• Inverted InAlAs/InGaAs Avalanche Photodiode with Low--High--Low Electric Field Profile
• High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
• Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
• Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
• Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
• Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
• Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
• Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
• Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
• High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
• Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
• Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates
• Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer
• High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
• Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
• Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
• Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
• High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures (Special Issue : Recent Advances in Nitride Semiconductors)
• Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors

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