High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
スポンサーリンク
概要
著者
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Maeda Narihiko
Ntt Photonics Laboratories Ntt Corporation
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Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
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Harada Yuichi
Ntt Basic Research Laboratories
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Sasaki Satoshi
Ntt Basic Research Laboratories
関連論文
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