Sasaki Satoshi | Ntt Basic Research Laboratories
スポンサーリンク
概要
関連著者
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Sasaki Satoshi
Ntt Basic Research Laboratories
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Maeda Narihiko
Ntt Photonics Laboratories Ntt Corporation
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Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
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Harada Yuichi
Ntt Basic Research Laboratories
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SASAKI Satoshi
NTT Basic Research Laboratories, NTT Corporation
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HIRAYAMA Yoshiro
NTT Basic Research Laboratories, NTT Corporation
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Hirayama Yoshiro
Ntt Basic Research Laboratories
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Tarucha Seigo
Ntt Basic Research Laboratories
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Kasu Makoto
Ntt Basic Research Laboratories
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YOKOO Atsushi
NTT Basic Research Laboratories
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Hayashi Toshiaki
Ntt Basic Research Laboratories Ntt Corporation
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FUJISAWA Toshimasa
NTT Basic Research Laboratories, NTT Corporation
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MAEDA Narihiko
NTT Photonics Laboratories, NTT Corporation
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Hirayama Yoshiro
Ntt Basic Research Laboratories Ntt Corporation
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TARUCHA Seigo
ERATO, Mesoscopic Correlation Project and Department of Applied Physics, University of Tokyo
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Fujisawa Toshimasa
Ntt Basic Research Laboratories
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Yamauchi Yoshiharu
Ntt Basic Research Laboratories
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Ueda Kenji
Ntt Basic Research Laboratories Ntt Corporation
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Maeda Narihiko
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Ye Haitao
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Ueda Kenji
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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HARADA Yuichi
NTT Basic Research Laboratories, NTT Corporation
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HAYASHI Toshiaki
NTT Basic Research Laboratories, NTT Corporation
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Sasaki Satoshi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
著作論文
- Long Spin Relaxation Time Observed in a Lateral Quantum Dot
- Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
- Oxidation Patterning of GaAs by Nanoelectrode Lithography
- RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
- High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
- High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
- High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
- High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures (Special Issue : Recent Advances in Nitride Semiconductors)
- The Kondo Effect Enhanced by State Degeneracy(Kondo Effect-40 Years after the Discovery)