MAEDA Narihiko | NTT Photonics Laboratories, NTT Corporation
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概要
関連著者
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MAEDA Narihiko
NTT Photonics Laboratories, NTT Corporation
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HIROKI Masanobu
NTT Photonics Laboratories, NTT Corporation
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Maeda Narihiko
Ntt Corp. Atsugi‐shi Jpn
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KOBAYASHI Takashi
NTT Photonics Laboratories, NTT Corporation
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Maeda Narihiko
Ntt Photonics Laboratories Ntt Corporation
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Maeda Narihiko
Institute For Solid State Physics University Of Tokyo
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Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
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Kobayashi T
Ntt Corp. Kanagawa Jpn
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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WANG Chengxin
NTT Photonics Laboratories, NTT Corporation
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ENOKI Takatomo
NTT Photonics Laboratories, NTT Corporation
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Enoki Takatomo
Ntt Photonics Laboratories
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Kobayashi Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Wang Chengxin
Ntt Photonics Laboratories Ntt Corporation
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Makimura Takashi
Ntt Basic Research Laboratories Ntt Corporation
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Shigekawa Naoteru
NTT Photonics Laboratories
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Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
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MAKIMURA Takashi
NTT Photonics Laboratories, NTT Corporation
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Makimura Takashi
Ntt Photonics Laboratories Ntt Corporation
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Makimura Takashi
NTT Photonics Laboratories
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YOKOYAMA Haruki
NTT Photonics Laboratories, NTT Corporation
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TAWARA Takehiko
NTT Basic Research Laboratories, NTT Corporation
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ENOKI Takotomo
NTT Photonics Laboratories, NTT Corporation
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WATANABE Noriyuki
NTT Photonics Laboratories
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Watanabe Noriyuki
Ntt Photonics Laboratories Ntt Corporation
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Oda Yasuhiro
Ntt Photonics Laboratories Ntt Corporation
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SASAKI Satoshi
NTT Basic Research Laboratories, NTT Corporation
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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YAGI Takuma
NTT Advanced Technology Corporation
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Kobayashi N
The University Of Electro-communications Department Of Applied Physics And Chemistry
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SAITOH Tadashi
NTT Basic Research Laboratories, Physical Science Laboratory
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WANG Chengxin
NTT Basic Research Laboratories, NTT Corporation
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TSUBAKI Kotaro
Department of Electrical and Electronic Engineering, Toyo University
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Harada Yuichi
Ntt Basic Research Laboratories
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Watanabe N
Ntt Photonics Laboratories Ntt Corporation
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MARUYAMA Takashi
NTT Advanced Technology Corporation
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Yokoyama Haruki
Ntt Photonics Laboratories
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Tawara Takehiko
Ntt Basic Research Laboratories Ntt Corporation
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Saitoh Tadashi
Ntt Basic Research Laboratories
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Maruyama Takashi
Ntt Access Network Service Systems Laboratories Ntt Corporation
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Tawara Takehiko
Ntt Basic Res. Lab. Kanagawa Jpn
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Sasaki Satoshi
Ntt Basic Research Laboratories
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HARADA Yuichi
NTT Basic Research Laboratories, NTT Corporation
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SAITOH Tadashi
NTT Basic Research Laboratories, NTT Corporation
著作論文
- Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
- Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
- High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
- Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
- Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
- High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures