ENOKI Takotomo | NTT Photonics Laboratories, NTT Corporation
スポンサーリンク
概要
関連著者
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KOBAYASHI Takashi
NTT Photonics Laboratories, NTT Corporation
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ENOKI Takotomo
NTT Photonics Laboratories, NTT Corporation
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Maeda Narihiko
Ntt Photonics Laboratories Ntt Corporation
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Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Wang Chengxin
Ntt Photonics Laboratories Ntt Corporation
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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MAEDA Narihiko
NTT Photonics Laboratories, NTT Corporation
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HIROKI Masanobu
NTT Photonics Laboratories, NTT Corporation
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Maeda Narihiko
Ntt Corp. Atsugi‐shi Jpn
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Maeda Narihiko
Institute For Solid State Physics University Of Tokyo
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TAWARA Takehiko
NTT Basic Research Laboratories, NTT Corporation
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WANG Chengxin
NTT Photonics Laboratories, NTT Corporation
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Tawara Takehiko
Ntt Basic Res. Lab. Kanagawa Jpn
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WATANABE Noriyuki
NTT Photonics Laboratories
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Kobayashi T
Ntt Corp. Kanagawa Jpn
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SAITOH Tadashi
NTT Basic Research Laboratories, Physical Science Laboratory
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Enoki Takatomo
Ntt Photonics Laboratories
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Kobayashi Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Makimura Takashi
Ntt Basic Research Laboratories Ntt Corporation
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Tawara Takehiko
Ntt Basic Research Laboratories Ntt Corporation
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Saitoh Tadashi
Ntt Basic Research Laboratories
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Tawara Takehiko
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Yokoyama Haruki
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Enoki Takotomo
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Hiroki Masanobu
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Wang Chengxin
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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SAITOH Tadashi
NTT Basic Research Laboratories, NTT Corporation
著作論文
- Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
- Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
- Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
- Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors