Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer

概要

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Device performances have been compared between two types of AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) with Al2O3/Si3N4 bilayers and a Si3N4 single layer. Al2O3/Si3N4 bilayer-based MIS-HFETs have much lower gate current leakage than Si3N4-based MIS devices by more than 3 orders of magnitude under reverse gate biases. An ultralow gate leakage of $1\times 10^{-11}$ A/mm at $-15$ V has been achieved in the Al2O3/Si3N4 bilayer-based MIS devices though higher maximum drain-source current has been obtained in the Si3N4-based MIS devices. A maximum transconductance of more than 180 mS/mm with ultra-low gate leakage has been achieved in the ultrathin Al2O3/Si3N4 bilayer-based MIS-HFET device with a gate length of 1.5 μm, which is much higher than that of less than 130 mS/mm in the Si3N4-based MIS devices. The reduction in the transconductance of Al2O3/Si3N4 bilayer-based devices was much smaller than that in the Si3N4-based MIS devices due to the employment of ultrathin bilayers with a large dielectric constant.This work demonstrates that an Al2O3/Si3N4 bilayer insulator is a superior candidate for nitride-based MIS-HFET devices.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-04-15