KOBAYASHI Takashi | NTT Photonics Laboratories, NTT Corporation

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著作論文

Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy
Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer
High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors

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