Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
-
KUMAKURA Kazuhide
NTT Basic Research Laboratories, NTT Corporation
-
MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
-
KOBAYASHI Naoki
Department of Physics, Chuo University
-
HIROKI Masanobu
NTT Photonics Laboratories, NTT Corporation
-
KOBAYASHI Takashi
NTT Photonics Laboratories, NTT Corporation
-
Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
-
Kobayashi N
The University Of Electro-communications Department Of Applied Physics And Chemistry
関連論文
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Reconstruction and Extension of the Family-Vicsek Scaling Hypothesis for Growing Rough Interfaces(General)
- Multi-Affinity for Growing Rough Interfaces of Bacterial Colonies(Oscillation, Chaos and Network Dynamics in Nonlinear Science)
- Extended Dynamic Scaling for Growing Interfaces(General)
- Patterns of Expansion produced by a Structured Cell Population of Serratia marcescens in Response to Different Media
- Modelling and Numerical Analysis of the Colony Formation of Bacteria
- Dream of Sanetomo : His Portrait in the Azuma Kagami and the Legends of Prince Shotoku
- Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
- Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
- Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
- Allogeneic Bone Marrow Transplantation as a Therapeutic Modality for Hematological Disorders : A Report Based on 39 Cases
- Fractal Structure and Statistics of Computer-simulated and Real Landforms(Cross-disciplinary physics and related areas of science and technology)
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
- Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
- Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
- Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
- Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
- Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
- Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
- Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy
- Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
- Short-Cavity Fabry-Perot Lasers Using Crystal Facets
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Triangular-Facet Lasers Coupled by a Rectangular Optical Waveguide
- Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
- Association of the Japanese Orthopaedic Association Score With the Oswestry Disability Index, Roland-Morris Disability Questionnaire, and Short-Form 36
- High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
- Novel Degradation of Sugar Skeleton by Diazidation
- Photoacoustic and Photoelectrochemical Characterization of Inverse Opal TiO_2 Sensitized with CdSe Quantum Dots
- Intravenous gamma-globulin therapy improves hypercytokinemia in the acute phase of Kawasaki disease
- GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
- Phosphory lated Sites of M_r 25,000 Protein, a Putative Protein Phosphatase 2A Modulator, and Phosphorylation of the Synthetic Peptide Containing These Sites by Protein Kinase C^1
- Modelling and Numerical Analysis of the Colony Formation of Bacteria
- InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
- Effect of EOS on Break-Up of Shoemaker-Levy 9 Entering Jovian Atmosphere
- Dynamic Scaling of the Growing Rough Surfaces(General)
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
- High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
- Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
- Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
- Morphologic Changes in the Cervical Neural Foramen due to Flexion and Extension : In Vivo Imaging Study
- D-galactosamine/Lipopolysaccharide による肝障害モデルで cytochrome c はミトコンドリアから細胞質そして循環血液中へ移行する
- 27a-ZG-19 Anti-Stokes photoluminescence originating due to DX centers
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Annealing Properties of Si-Atomic-Layer-Doped GaAs
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Temperature dependence of current-voltage characteristics for AlGaN-based vertical conducting diodes
- p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
- Effect of a Platelet-Activating Factor Receptor Antagonist, E5880, on Cerebral Vasospasm after Aneurysmal Subarachnoid Hemorrhage : Open Clinical Trial to Investigate Efficacy and Safety
- Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN ($x = 0.245--0.325$) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
- 1P096 Long time folding simulations of a three-stranded antiparallel β-sheet peptide and a ββα-folded peptide(3. Protein folding and misfolding (I),Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Ohmic Contact to p-GaN Using a Strained Layer and Its Thermal Stability
- Reduction of Acyl Enolates of α-Substituted β-Keto Esters by Bakers' Yeast(Organic Chemistry)
- Concurrent Programming in Linear Logic
- Verification of Concurrent Programs Using the Coq Proof Assistant : A Case Study
- EFFECT OF KANJI AND KANA READING ON CEREBRAL BLOOD FLOW PATTERNS MEASURED BY PET
- Hydrogen Evolution from p-GaN Cathode in Water under UV Light Irradiation
- Common - Emitter Current - Voltage Characteristics of Pnp AlGaN/GaN Heterojunction Bipolar Transistors
- Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy
- High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
- High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
- Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
- Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
- Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
- Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
- Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
- High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
- Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
- Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer
- High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
- Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
- High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures (Special Issue : Recent Advances in Nitride Semiconductors)