Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
-
KUMAKURA Kazuhide
NTT Basic Research Laboratories, NTT Corporation
-
MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
-
KOBAYASHI Naoki
NTT Basic Research Laboratories
-
Kobayashi N
The University Of Electro-communications Department Of Applied Physics And Chemistry
-
Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
-
Makimoto T
Ntt Basic Research Laboratories
-
Kumakura K
Ntt Basic Research Laboratories
-
Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
-
Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
関連論文
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicirual Substrate Grown by Metalorganic Chemical Vapor Deposition
- Formation of Solid Solution of Al_Si_xN (0
- Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
- Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- Carbom Atomic Layer Doping in AlGaAs by Metalorganic Chemical VaporDeposition and Its Application to a P-Type Modulation Doped Structure
- Low-Temperature GaAs Metalorganic Chemical Vapor Deposition Using Dimethylamine Gallane and Arsine
- Carbon Modulation-Doped P-AlGaAs/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
- Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
- Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
- Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
- Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
- Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
- Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
- Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy
- Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
- Short-Cavity Fabry-Perot Lasers Using Crystal Facets
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Triangular-Facet Lasers Coupled by a Rectangular Optical Waveguide
- Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
- High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
- GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
- Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
- In Situ Monitoring of Adsorption and Desorption of Atomic Nitrogen on GaAs (001) and (111)A Surfaces
- Arsenic Coverages and Surface Structures of As-Stabilized GaAs (001) Surfaces during Metalorganic Chemical Vapor Deposition Observed by Reflectance Difference
- GaAs Quantum-Wire Laser Using Fractional Layer Superlattice
- In Situ Spectrum Observation of Ga Deposition Process during GaAs Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
- Spectral Observation of As-Stabilized GaAs Surfaces in Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
- InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
- Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
- Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
- 27a-ZG-19 Anti-Stokes photoluminescence originating due to DX centers
- In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Annealing Properties of Si-Atomic-Layer-Doped GaAs
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
- Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Surface Morphology and Carbon Incorporation for Hexagonal GaN/(111)B GaAs Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine and Trimethylgallium
- Formation of a 100-μm-wide Stepfree GaAs (111)B Surface Obtained by Finite Area Metalorganic Vapor Phase Epitaxy
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Temperature dependence of current-voltage characteristics for AlGaN-based vertical conducting diodes
- p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
- Using Tertiary Butylamine for Nitrogen Doping during Migration-Enhanced Epitaxial Growth of ZnSe
- Novel Design to Fabricate High Reflectivity GaN-Based Semiconductor/Air Distributed Bragg Reflector With the Tilt of Vertical Sidewall : Semiconductors
- Step-Free Surface Grown on GaAs (111)B Substrate by Local Metalorganic Vapor Phase Epitaxy
- Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
- Ohmic Contact to p-GaN Using a Strained Layer and Its Thermal Stability
- 4) Development of A Lossless Video Coding System Using Motion Compensation([マルチメディア情報処理研究会映像表現研究会ネットワ-ク映像メディア研究会画像情報システム研究会]合同)
- Hexagonal-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition
- Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
- Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter
- In-Situ Control of Strained Heterostructure Growth
- Growth of Boron Nitride on 6H–SiC Substrate by Flow-Rate Modulation Epitaxy
- Anisotropic Oscillation Properties in Fractional-Superlattice Quantum Wire Lasers
- Step-Free Surface Grown on GaAs (111)B Substrate by Localized Area Metalorganic Vapor Phase Epitaxy
- Low Temperature Growth of GaAs and InAs/GaAs Quantum Well on (111)B Substrate by Metalorganic Vapor Phase Epitaxy
- In Situ Interface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption
- As and P Desorption from III-V Semiconductor Surface in Metalorganic Chemical Vapor Deposition Studied by Surface Photo-Absorption
- Growth-Rate Self-Limitation Mechanism in InP Atomic Layer Epitaxy Studied by Surface Photo-Absorption
- Pyrolysis of Organo-As Precursors Studied by Surface Photo-Absorption
- Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE
- Decomposition Process of Alane and Gallane Compounds in Metal-Organic Chemical Vapor Deposition Studied by Surface Photo-Absorption
- Common - Emitter Current - Voltage Characteristics of Pnp AlGaN/GaN Heterojunction Bipolar Transistors
- High-Temperature Operation Over 500℃ of Pnp AlGaN/GaN HBTs
- Flow-rate modulation epitaxy of wurtzite AlBN
- Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors with Low-Base-Resistance (
- Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa_2Cu_3O_ Thin Films
- High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition
- Growth of Boron Nitride on 6H-SiC Substrate by Flow-rate Modulation Epitaxy
- InGaN quantum wells with small potential fluctuation
- p^+ -n^+ GaAs Tunnel Junction Diodes Grown by Flow-Rate Modulation Epitaxy
- Increased Electrical Activity of Mg-Acceptors in Al_xGa_N/GaN Superlattices
- Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots
- Chemical Shift in Optical Reflection Spectra Observed During III-V Semiconductor Metalorganic Chemical Vapor Deposition Growth by Surface Photo-Absorption Method
- Theoretical Study of Silicon Adatom Transfer from the Silicon Surface in Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- Theoretical Study of Current and Barrier Height between Alurninum Tip and Silicon Surface in Scanning Tunneling Microscopy
- Triangular-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition