Growth-Rate Self-Limitation Mechanism in InP Atomic Layer Epitaxy Studied by Surface Photo-Absorption
スポンサーリンク
概要
- 論文の詳細を見る
The pyrolysis of trimethylindium (TMI) and phosphine (PH_3) on an (001) InP surface is studied by surface photo-absorption. In the same manner as the pyrolysis of trimethylgallium on GaAs, self-limitation is observed in the change in reflectivity when TMI is supplied to a P-stabilized surface at 350℃. This result indicates that the surface is saturated by TMI adsorption to form a CH_3-terminated In surface. H_2 purging after TMI adsorption increases the reflectivity further to the level of a metal surface with an In monolayer, indicating that CH_3 groups desorb during purging. This paper also finds the pyrolysis of PH_3 on a CH_3-terminated In surface is much slower than on In metal surface. The growth rate is self-limited to less than one monolayer per cycle in InP atomic layer epitaxy because the surface is not completely transformed to a P surface during PH_3 supply, as PH_3 pyrolysis is slow on a CH_3-terminated In surface. The growth rate approaches one monolayer per cycle when PH_3 is supplied to an In metal surface produced by CH_3 desorption.
- 社団法人応用物理学会の論文
- 1992-02-01
著者
-
KOBAYASHI Naoki
NTT Basic Research Laboratories
-
Kobayashi Yasuyuki
Ntt Basic Research Laboratories
-
Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
関連論文
- Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
- Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicirual Substrate Grown by Metalorganic Chemical Vapor Deposition
- Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
- Formation of Solid Solution of Al_Si_xN (0
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- Carbom Atomic Layer Doping in AlGaAs by Metalorganic Chemical VaporDeposition and Its Application to a P-Type Modulation Doped Structure
- Low-Temperature GaAs Metalorganic Chemical Vapor Deposition Using Dimethylamine Gallane and Arsine
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
- Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
- Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
- Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
- Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
- Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
- Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy
- Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
- Short-Cavity Fabry-Perot Lasers Using Crystal Facets
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Triangular-Facet Lasers Coupled by a Rectangular Optical Waveguide
- Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
- GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
- Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
- In Situ Monitoring of Adsorption and Desorption of Atomic Nitrogen on GaAs (001) and (111)A Surfaces
- Arsenic Coverages and Surface Structures of As-Stabilized GaAs (001) Surfaces during Metalorganic Chemical Vapor Deposition Observed by Reflectance Difference
- GaAs Quantum-Wire Laser Using Fractional Layer Superlattice
- In Situ Spectrum Observation of Ga Deposition Process during GaAs Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
- Spectral Observation of As-Stabilized GaAs Surfaces in Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
- In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Surface Morphology and Carbon Incorporation for Hexagonal GaN/(111)B GaAs Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine and Trimethylgallium
- Formation of a 100-μm-wide Stepfree GaAs (111)B Surface Obtained by Finite Area Metalorganic Vapor Phase Epitaxy
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Using Tertiary Butylamine for Nitrogen Doping during Migration-Enhanced Epitaxial Growth of ZnSe
- Novel Design to Fabricate High Reflectivity GaN-Based Semiconductor/Air Distributed Bragg Reflector With the Tilt of Vertical Sidewall : Semiconductors
- Step-Free Surface Grown on GaAs (111)B Substrate by Local Metalorganic Vapor Phase Epitaxy
- Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
- Ohmic Contact to p-GaN Using a Strained Layer and Its Thermal Stability
- 4) Development of A Lossless Video Coding System Using Motion Compensation([マルチメディア情報処理研究会映像表現研究会ネットワ-ク映像メディア研究会画像情報システム研究会]合同)
- Hexagonal-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition
- Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
- In-Situ Control of Strained Heterostructure Growth
- Growth of Boron Nitride on 6H–SiC Substrate by Flow-Rate Modulation Epitaxy
- Flat Surfaces and Interfaces in AlN/GaN Heterostructures and Superlattices Grown by Flow-Rate Modulation Epitaxy
- Anisotropic Oscillation Properties in Fractional-Superlattice Quantum Wire Lasers
- Step-Free Surface Grown on GaAs (111)B Substrate by Localized Area Metalorganic Vapor Phase Epitaxy
- Low Temperature Growth of GaAs and InAs/GaAs Quantum Well on (111)B Substrate by Metalorganic Vapor Phase Epitaxy
- In Situ Interface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption
- As and P Desorption from III-V Semiconductor Surface in Metalorganic Chemical Vapor Deposition Studied by Surface Photo-Absorption
- Growth-Rate Self-Limitation Mechanism in InP Atomic Layer Epitaxy Studied by Surface Photo-Absorption
- Pyrolysis of Organo-As Precursors Studied by Surface Photo-Absorption
- Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE
- Decomposition Process of Alane and Gallane Compounds in Metal-Organic Chemical Vapor Deposition Studied by Surface Photo-Absorption
- High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition
- Growth of Boron Nitride on 6H-SiC Substrate by Flow-rate Modulation Epitaxy
- Increased Electrical Activity of Mg-Acceptors in Al_xGa_N/GaN Superlattices
- Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots
- Chemical Shift in Optical Reflection Spectra Observed During III-V Semiconductor Metalorganic Chemical Vapor Deposition Growth by Surface Photo-Absorption Method
- Spectral Dependence of Optical Reflection during Flow-Rate Modulation Epitaxy of GaAs by the Surface Photo-Absorption Method
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- Theoretical Study of Silicon Adatom Transfer from the Silicon Surface in Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- Theoretical Study of Current and Barrier Height between Alurninum Tip and Silicon Surface in Scanning Tunneling Microscopy
- Pyrolysis of Trimethylgallium on (001) GaAs Surface Investigated by Surface Photo-Absorption
- Triangular-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition
- Novel Hexagonal-Facet GaAs/AlGaAs Laser Grown by Selective Area Metalorganic Chemical Vapor Deposition
- Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
- Highly Transparent Structure for Nitride Ultraviolet Light Emitting Diodes
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Ohmic Contact to $p$-GaN Using a Strained InGaN Contact Layer and Its Thermal Stability
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE