Pyrolysis of Trimethylgallium on (001) GaAs Surface Investigated by Surface Photo-Absorption
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概要
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We directly observe the process of CH_3 desorption from a GaAs surface reacted with trimethlgallium (TMG), using the surface photo-absorption method. Aftr supply of TMG onto the As-stabilized (001) GaAs surface in H_2 carrier gas, the reflectivity increases and saturates during H_2 purging at substrate temperatures below 500℃. The observed reflectivity change corresponds to the formation of the Ga metal surface caused by CH_3 desorption from the CH_3-terminated surface. The CH_3 desorption can be described by first-order kinetics, and the desorption rate constant is 2×10^<-2>s', i.e., a lifetime of 50 s at 485℃. This is long enough to support the well-accepted mechanism of atomic layer epitaxy, i.e., the inability of the excess TMG to adsorb when supplied to the CH_3-terminated surface.
- 社団法人応用物理学会の論文
- 1991-03-01
著者
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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Kobayashi Naoki
NTT Basic Reseach Laboratories
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