Effects of Annealing on the Structural Properties of GaAs on Si(100) Grown at a Low Temperature by Migration-Enhanced Epitaxy
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概要
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This paper reports the effects of annealing on the structural properties of GaAs on Si(100) grown at a low temperature by migration-enhanced epitaxy (MEE). Low-temperature MEE growth at 3O0℃ followed by brief postgrowth annealing at 580℃ produces better-quality crystals than conventional high-temperature growth. A 6 μm-thick sample produced using this method showed an X-ray diffraction FWHM of 123 arcsec with an etch-pit density of 4×10^5 cm^<-2>. This indicates that low-temperature MEE growth can significantly reduce the dislocation density in the GaAs epilayer compared to the conventional two-step growth technique.
- 社団法人応用物理学会の論文
- 1990-04-20
著者
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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NOZAWA Kazuhiko
NTT Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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