Impurity Doping Effect on the Dislocation Density in GaAs on Si (100) Grown by Migration-Enhanced Epitaxy
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Dislocation density in GaAs epilayers grown on Si substrates by migration-enhanced epitaxy can be reduced by heavy doping of Si without using strained-layer superlattices or repeated annealing procedures. This effect is demonstrated by TEM and EBIC observations. The EBIC topographic observations show that the dislocation density of 6-μm-thick nonoptimized samples is approximately 4 × 10^6 cm^<-2>, which compares favorably with the value of ∼ 1 × 10^7 cm^<-2> in undoped samples. The bent dislocations are mostly arranged parallel to the steps which exist on a tilted substrate surface.
- 社団法人応用物理学会の論文
- 1989-11-20
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