Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy
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概要
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The mechanism of step-flow growth on vicinal GaAs substrates during migration-enhanced epitaxy are studied using the reflection high-energy electron diffraction technique. Results show that the low As pressure during migration-enhanced epitaxy growth accelerates step-flow growth. In addition, it is also shown that monolayer terraces composed of surface Ga atoms are formed from step edges during the Ga deposition process. A GaAs/AlAs tilted superlattice is established using this growth technique. X-ray diffraction measurement and transmission electron microscopy observations show that the fabricated structure has periodic composition modulation along the axis tilted from the substrate azimuth.
- 社団法人応用物理学会の論文
- 1989-08-20
著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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