Anomalous Distribution of In Atoms in GaAs during Migration-Enhanced Epitaxy

概要

論文の詳細を見る
An Inks monolayer is grown between GaAs layers using migration-enhanced epitaxy. The surface chemical characteristic during growth is investigated by reflection high energy electron diffraction. When the substrate temperature is about 500℃, the oscillation amplitude of reflected electron beam after growth of one monolayer of InAs vanishes during the growth of GaAs over more than 20 atomic layers. High-resolution secondary-ion mass spectroscopic analysis of the fabricated structures indicates that the anomalous distribution of In atoms with a gradual slope towards the growth direction occurs when the substrate temperature is 500℃. The experimental results are explained in terms of the replacement of In atoms in the InAs monolayer by the newly deposited Ga atoms.
社団法人応用物理学会の論文
1989-11-20