Structural Properties of (GaAs)_<1-x>(Si_2)_x Layers on GaAs(100) Substrates Grown by Migration-Enhanced Epitaxy
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概要
- 論文の詳細を見る
Epitaxial (GaAs)_<:1-x>(Su_2)_x alloy layers (0<x<0.25) were grown on GaAs (100) substrates using Migration-Enhanced Epitaxy. Structural and compositional analysis of the as-grown (GaAs)_<:1-x>(Si_2)_x layers indicated single-crystal zincblende structure with no evidence of phase separation throughout the entire compositional range. The lattice constant a_0 of the alloys was found to decrease linearly with increasing Si content from 0.56543 nm at.x=0 to 0.5601 nm at x=0.25. Double crystal X-ray rocking curve measurements and cross-sectional transmission electron microscopy studies made on a 10 period (GaAs)_<0.80>(Si_2)_<0.20>/GaAs strained-layer superlattice indicated sharp and abrupt interfaces of high crystalline quality.
- 社団法人応用物理学会の論文
- 1991-04-01
著者
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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NOZAWA Kazuhiko
NTT Basic Research Laboratories
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Sudersena Rao
NTT Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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