Carrier Concentration Saturation of Double Si Doping Layers in GaAs
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概要
- 論文の詳細を見る
Doubly Si δ-doped GaAs samples with different spacer thickness are grown by molecular beam epitaxy. By adopting a growth temperature as low as 400℃, a "true" δ-doping profile is realized and confirmed by Shubnikovde Haas measurement. A depopulation of sheet carrier concentration is observed as the two layers approach each other. The carrier concentration saturates in such a way that the depth of the self-consistently calculated Hartree potential is kept constant at around 235 meV. Since carrier concentration saturation due to structural reasons remains unchanged in these structures, the pinning of Fermi level suggests a dominant electronic saturation mechanism most likely through the population of DX center states.
- 社団法人応用物理学会の論文
- 1996-09-15
著者
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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Peng Zhongling
Ntt Basic Research Laboratories
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Horikoshi Yoshiji
Ntt Basic Research Laboratories:(present Address) Faculty Of Science And Engineering Waseda Universi
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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