Extremely Sharp Photoluminescence from InGaAs/GaAs Quantum Wells Grown by Flow-Rate Modulation Epitaxy : III-V Compound Semiconductors Devices and Materials(<Special Section>Solid State Devices and Materials 1)
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概要
- 論文の詳細を見る
- 1988-11-20
著者
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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Sato Masa-aki
Faculty Of Mercantile Marine Science Kobe University Of Merchantile Marine
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SATO Michio
NTT Basic Research Laboratories
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