Adsorption and Decomposition of Organometallics on GaAs Surfaces in Low-Pressure Metalorganie Chemical Vapor Deposition

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概要

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• To determine the mechanism of surface reactions during metalorganic chemical vapor deposition, we perform mass spectrometric studies of the products desorbed from a GaAs surface upon pulsed supply of the reactants. We find that the surface after trimethylgallium (TMG) exposure is terminated by CH_3 and that the desorption of the CH_3 from the surface is activated by the presence of As. The adsorption of triethylgallium (TEG) is inhibited on a CH_3-terminated surface whereas TEG is decomposed both on As-rich and on Ga-rich surfaces. The effect of CH_3 termination is highlighted by the complete inhibition of triethylaluminum decomposition when it is introduced together with TMG.

• 社団法人応用物理学会の論文
• 1991-11-15

著者

• Weyers Markus

  Ntt Basic Research Laboratories

• SATO Michio

  NTT Basic Research Laboratories

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• Epitaxial Growth of InN by Plasma-Assisted Metalorgamic Chermical Vapor Deposition
• Adsorption and Decomposition of Organometallics on GaAs Surfaces in Low-Pressure Metalorganie Chemical Vapor Deposition
• A Comparison of the Growth of GaAs and GaP frorm Trimethyl-Gallium
• Plasma-Assisted MOCVD Growth of GaAs/GaN/GaAs Thin-Layer Structures by N-As Replacement Using N-Radicals

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