Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
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概要
- 論文の詳細を見る
We present the first report on the optical properties of dilute GaAS_<1-x>N_x alloys (0<x<0.015). The layers have been grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). The grown layers show a systematic red shift of the band-edge luminescence with increasing N content. The assignement of the photoluminescence to band-edge transitions and not to isolated N-N pair emission is verified by the characteristics of the optical absorption.
- 社団法人応用物理学会の論文
- 1992-07-01
著者
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ANDO Hiroaki
NTT Basic Research Laboratories
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Ando H
Ntt Basic Research Laboratories
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Weyers Markus
Ntt Basic Research Laboratories
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Weyers Markus
Ntt Basic Research Laboratories:(present Address) Ferdinand-braun-institut
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SATO Michio
NTT Basic Research Laboratories
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