Epitaxial Growth of InN by Plasma-Assisted Metalorgamic Chermical Vapor Deposition
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概要
- 論文の詳細を見る
InN epitaxial films were grown on (0001) sapphire substrates by plasma-assisted metalorganic chemical vapor deposition, by which large amounts of radicals can be supplied to a surface with less ion damages, using tri-ethylindium and nitrogen radicals as the precursors. When argon was used as a cxarrier gas, InN having a rough surface with a lot of indium droplets was grown. When hydrogen was used, the InN surface was specular and few droplets were found. InN was grown in hydrogen at a low temperature of 4O0℃ where no growth occurred in argon, These results suggest that the carrier gas influences the InN growth and that hydrogen enhances both the decomposition of organometallics and the removal of excess metal atoms at the growing surface.
- 社団法人応用物理学会の論文
- 1997-05-15
著者
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Sato Masa-aki
Faculty Of Mercantile Marine Science Kobe University Of Merchantile Marine
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SATO Michio
NTT Basic Research Laboratories
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