A Comparison of the Growth of GaAs and GaP frorm Trimethyl-Gallium
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概要
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In the growth of GaAs and GaP from trimethyl-gallium (TMG) significant differences are observed. At low growth temperatures, the GaP growth rate is lower than that of GaAs. Additionally, more carbon is incorporated into GaP than into GaAs. Mass spectrometric studies on methyl desorption from a substrate show that As and P differ in their ability to break the final Ga-carbon bond. The lower efficiency of P in breaking monomethyl-gallium(MMG) causes to the observed differences in the growth rates and carbon uptake. Based on the growth results and the mass spectrometric data on methyl desorption, a model of the reaction path leading to the decomposition of TMG and to the production of Ga is developed. This model includes the presence of dimethyl-gallium (DMG) in both a physi-sorbed (weakly bonded) state and a chemi-sorbed (strongly bonded) state as the first intermediate products in the decomposition of TMG.
- 社団法人応用物理学会の論文
- 1995-02-15
著者
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Weyers Markus
Ntt Basic Research Laboratories
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Weyers Markus
Ntt Basic Research Laboratories:(present Address)ferdinand-braun-institut
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SATO Michio
NTT Basic Research Laboratories
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